Radiation induced oscillations of the Hall resistivity in two-dimensional electron systems

We consider the effect of microwave radiation on the Hall resistivity in two-dimension electron systems. It is shown that the photon-assisted impurity scattering of electrons can result in oscillatory dependences of both dissipative and Hall components of the conductivity and resistivity tensors on the ratio of radiation frequency to cyclotron frequency. The Hall resistivity can include a component induced by microwave radiation which is an even function of the magnetic field. The phase of the dissipative resistivity oscillations and the polarization dependence of their amplitude are compared with those of the Hall resistivity oscillations. The developed model can clarify the results of recent experimental observations of the radiation induced Hall effect.Comment: 4 pages, 1 figur

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.Comment: 4 pages text, 4 color figure

Hall Effect Gyrators and Circulators

The electronic circulator, and its close relative the gyrator, are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies. The current implementation of these devices using the Faraday effect is satisfactory, but requires a bulky structure whose physical dimension is close to the microwave wavelength employed. The Hall effect is an alternative non-reciprocal effect that can also be used to produce desired device functionality. We review earlier efforts to use an ohmically-contacted four-terminal Hall bar, explaining why this approach leads to unacceptably high device loss. We find that capacitive coupling to such a Hall conductor has much greater promise for achieving good circulator and gyrator functionality. We formulate a classical Ohm-Hall analysis for calculating the properties of such a device, and show how this classical theory simplifies remarkably in the limiting case of the Hall angle approaching 90 degrees. In this limit we find that either a four-terminal or a three-terminal capacitive device can give excellent circulator behavior, with device dimensions far smaller than the a.c. wavelength. An experiment is proposed to achieve GHz-band gyration in millimetre (and smaller) scale structures employing either semiconductor heterostructure or graphene Hall conductors. An inductively coupled scheme for realising a Hall gyrator is also analysed.Comment: 18 pages, 15 figures, ~5 MB. V3: sections V-VIII revisited plus other minor changes, Fig 2 added. Submitted to PR

Transmission Lines and Meta-Materials based on Quantum Hall Plasmonics

The characteristic impedance of a microwave transmission line is typically constrained to a value $Z_0$ = 50 $\Omega$, in-part because of the low impedance of free space and the limited range of permittivity and permeability realizable with conventional materials. Here we suggest the possibility of constructing high-impedance transmission lines by exploiting the plasmonic response of edge states associated with the quantum Hall effect in gated devices. We analyze various implementations of quantum Hall transmission lines based on distributed networks and lumped-element circuits, including a detailed account of parasitic capacitance and Coulomb drag effects, which can modify device performance. We additionally conceive of a meta-material structure comprising arrays of quantum Hall droplets and analyze its unusual properties. The realization of such structures holds promise for efficiently wiring-up quantum circuits on chip, as well as engineering strong coupling between semiconductor qubits and microwave photons

Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance (FMR) over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in non-magnetic conductors. Here we study the spin-pumping-induced voltages due to the inverse spin Hall effect in permalloy/normal metal bilayers integrated into coplanar waveguides for different normal metals and as a function of angle of the applied magnetic field direction, as well as microwave frequency and power. We find good agreement between experimental data and a theoretical model that includes contributions from anisotropic magnetoresistance (AMR) and inverse spin Hall effect (ISHE). The analysis provides consistent results over a wide range of experimental conditions as long as the precise magnetization trajectory is taken into account. The spin Hall angles for Pt, Pd, Au and Mo were determined with high precision to be $0.013\pm0.002$, $0.0064\pm0.001$, $0.0035\pm0.0003$ and $-0.0005\pm0.0001$, respectively.Comment: 11 page